ENGLISH OVERVIEW

Silicon-photonics PICs with Ge PDs

Ge-on-Si photonic wafer processes

Ge absorbers are integrated with silicon waveguides so that detection becomes part of a PIC. Buyers often obtain a photonic chip or foundry process containing PDs instead of a separate Ge detector die.

Sources reviewed: 2026-10-06

Role in the receiver chain

Tower publishes high-speed Ge PDs in PH18MA; ST identifies GePDs in its PIC100 white paper; GlobalFoundries reports Ge PDs in a 300 mm platform paper. imec describes selective Ge growth and optical/electronic integration as a research platform. These disclosures do not imply identical specifications, maturity or customer production status.

Why Ge PDs are common in silicon photonics

Ge absorbs communications-band light and can be integrated beside or above silicon waveguides, alongside modulators and demultiplexers in multichannel PICs. Its appeal is platform integration and scaling channel count, not universal superiority in dark current, responsivity or bandwidth. Defect control, thermal budgets and complete-chip yield remain process challenges.

Connected industry roles

Links describe supply, classification, technology or services. They do not establish transactions between individual companies.

Photonics SOI wafers → Silicon-photonics PICs with Ge PDs

Waveguides and Ge absorbers

SOI starting wafers enter photonic processes with Ge absorber regions, rather than using bulk Ge substrates.

imec | Ge growth, PICs and electronic integration

Sources reviewed: 2026-10-06

Silicon Photonics ↔ Silicon-photonics PICs with Ge PDs

Silicon-photonic detector option

Ge-on-Si is a common detector implementation, not an automatic material classification for every silicon-photonics product.

Tower | PH18MA design kit with Ge PDs

Sources reviewed: 2026-10-06

Silicon-photonics PICs with Ge PDs → Optical receiver integration

PIC containing PDs

The PIC already includes detection; receiver electronics, fiber interfaces and packaging are still required.

imec | Ge growth, PICs and electronic integration

Sources reviewed: 2026-10-06

Optical receiver measurement & test → Silicon-photonics PICs with Ge PDs

Photonic wafer testing

Characterize photonic devices at wafer level to support known-good selection.

Keysight | NX5402A silicon photonics wafer testing

Sources reviewed: 2026-10-06

Company examples & product roles

Representative roles are supported by public products, processes or services, with research and demonstrations identified. Material evidence applies to the cited product, not every product of a brand or an inferred customer contract.

GlobalFoundries ↗

United States · Example role

Photonic process with Ge PDs

A CLEO 2026 paper reports Ge PDs in a 300 mm platform; paper results are not guaranteed specifications for every foundry product.

Official product / role source

Tower Semiconductor ↗

Israel · Example role

SiPho foundry platform with Ge PDs

The PH18MA process design kit explicitly includes high-speed Ge detectors; evidence concerns platform devices, not every customer module.

Official product / role source

STMicroelectronics ↗

Switzerland (headquarters) · Example role

PIC100 GePD photonic platform

The PIC100 white paper explicitly identifies GePDs; it supports material classification without implying individual customer orders.

Official product / role source

imec ↗

Belgium · Example role

Ge-on-Si process and integration research

Publishes selective Ge growth and PIC/EIC integration research; a research platform rather than a finished commercial module brand.

Official product / role source

Sources

This English overview condenses the original guide. Product specifications and certifications should be checked against the linked manufacturer documentation.