ENGLISH OVERVIEW

High-Bandwidth Memory

Stacked DRAM with a wide data interface

HBM stacks multiple DRAM dies with vertical connections such as through-silicon vias. It is often placed beside high-performance processors on a shared package platform. Capacity measures stored data; bandwidth measures data moved per second.

Sources reviewed: 2026-10-03

Different from a server memory module

HBM uses stacked dies and close package connections rather than a conventional replaceable DIMM. It is not a memory module users can simply swap.

  • Thin dies, TSVs and stacking increase alignment, defect-control and thermal-management requirements.

Packaging and memory must be qualified together

CoWoS is one packaging option for integrating HBM with logic. Their qualification and supply schedules interact.

  • Compare memory generation, stack configuration, bandwidth and capacity rather than treating every HBM product as identical.

Separate memory vendors, base dies and manufacturing

HBM product vendors include SK hynix, Samsung and Micron. TSMC, PSMC and Phison have distinct roles.

  • TSMC: SK hynix HBM4 logic-base-die cooperation and CoWoS integration.
  • PSMC: announced Micron HBM/PWF manufacturing cooperation; its WoW platform is listed separately.
  • Phison: aiDAPTIV uses NAND for capacity extension; that does not make Phison an HBM DRAM manufacturer.
  • HBM requires DRAM design, TSVs, thinning, precise stacking, testing and thermal engineering, not stacking finished DDR5 parts.

Connected industry roles

Links describe supply, classification, technology or services. They do not establish transactions between individual companies.

High-Bandwidth Memory → CoWoS Advanced Packaging

Integrated component

CoWoS can integrate HBM and logic chips; HBM is memory, while CoWoS is packaging technology.

TSMC | CoWoS-S/R/L

Sources reviewed: 2026-09-26

High-Bandwidth Memory → GPUs and AI Accelerators

High-bandwidth memory

Some high-performance GPUs use HBM; capacity and bandwidth depend on configuration.

NVIDIA | H200: a compute and HBM system example

Sources reviewed: 2026-09-26

Wafer Fabrication ↔ High-Bandwidth Memory

DRAM dies and subsequent stacking

HBM needs DRAM dies, vertical interconnects and stacking; wafer fabrication is one stage.

Micron | HBM architecture

Sources reviewed: 2026-09-26

DRAM chips → High-Bandwidth Memory

HBM is a DRAM architecture

a role relationship, not a contract among all listed companies.

Micron | HBM products and architecture

Sources reviewed: 2026-10-03

HBM logic base dies → High-Bandwidth Memory

Logic base for the stack

a role relationship, not a contract among all listed companies.

SK hynix | TSMC cooperation on HBM4 base dies and CoWoS integration

Sources reviewed: 2026-10-03

HBM / PWF manufacturing → High-Bandwidth Memory

Micron HBM manufacturing cooperation

a role relationship, not a contract among all listed companies.

PSMC | March 16, 2026 Micron HBM/PWF cooperation

Sources reviewed: 2026-10-03

Company examples & product roles

HBM die and stacked-memory manufacturing, base logic-die foundry services, and package integration are different roles.

TSMC ↗

Taiwan · Related role

Related: packaging integration

Integrates computing chips and HBM through CoWoS; not an HBM DRAM manufacturer.

Official product / role source

SK hynix ↗

South Korea · Example role

HBM memory manufacturer

Develops and manufactures stacked high-bandwidth memory.

Official product / role source

Micron ↗

United States · Example role

HBM memory manufacturer

HBM products for AI and high-performance computing.

Official product / role source

Samsung Electronics ↗

South Korea · Example role

HBM memory manufacturer

Supplies HBM products, distinct from base-die foundry and package-integration services.

Official product / role source

Sources

This English overview condenses the original guide. Product specifications and certifications should be checked against the linked manufacturer documentation.